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US20240080817A1 - Quantum device - Google Patents
WebVDOMDHTMLtml> Proximity Effect Induced Spin Injection in Phosphorene on Magnetic Insulator - ACS Applied Materials & Interfaces (ACS Publications) Proximity Effect Induced Spin Injection in Phosphorene on Magnetic Insulator ADVERTISEMENT Log In Register Cart ACS ACS Publications C&EN CAS ACS Journals ACS eBooks WebAbstract Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. shoe shops in dunfermline
Spin Injection in Quantum Wells with Spatially Dependent Rashba ...
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